PART |
Description |
Maker |
D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202 TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 6A条一(c)| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor NPN DARLINGTON HIGH POWER SILICON TRANSISTOR 12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation] MICROSEMI CORP-LAWRENCE
|
CEN-U45 |
Leaded Power Transistor Darlington NPN SILICON DARLINGTON TRANSISTOR
|
http:// CENTRAL[Central Semiconductor Corp] Central Semiconductor Corp.
|
FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Darlington Transistor NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
MPSA28 MPSA28_D ON2340 MPSA29 |
(MPSA28 / MPSA29) Darlington Transistor Darlington Transistors(NPN Silicon) CASE 294, STYLE 1 TO2 (TO?26AA) From old datasheet system
|
MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
KSP27 KSP27TA KSP25 KSP25TA KSP26 KSP26TA KSP25BU |
CAP 1000PF 50V CERAMIC X7R 10% 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 NPN Epitaxial Silicon Darlington Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
UPA1478 UPA1478H UPA1478H-AZ |
2 A, 35 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR SIP-10 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
Micrel Semiconductor, Inc. NEC[NEC]
|
UPA1476 UPA1476H |
2 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC Corp. NEC[NEC]
|
BCV29 |
500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN SILICON PLANAR DARLINGTON TRANSISTOR
|
DIODES INC Zetex Semiconductors
|